New challenges offered by the application of high-k dielectric materials in micro– and nanoelectronics are discussed by more than 100 participants from industry, research institutes and universities.

In this series of annual workshops, NaMLab has created a stimulating platform for application-oriented scientists to exchange ideas and discuss recent experimental results on devices, process technology, reliability, and characterization of high-k dielectrics integrated into silicon-based micro- and nanoelectronics. As in previous years, the causes for the formation of ferroelectric properties in HfO2 and ZrO2 and the application of these films will be discussed.